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1 article(s) from Reichert, Thomas

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

Thomas Reichert and
Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

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Figure 1: (a) Device layout of a bottom-contact organic field-effect transistor, showing n-Si as gate electro...

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Figure 2: Voltage dependence (V_d and V_g) of the magnetoresistance for compositions of (a) 51:49, (b) 78:22 an...

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Figure 3: The drain voltage V_d^SC, at which the sign reversal takes place, is plotted for different V_g for all...

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Figure 4: Representative MR line shape curves are shown at V_d = −5 V and +5 V. Black and red lines indicate f...

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Figure 5: The dependence of the MR line shape curves on the drain voltage V_d is shown for a mixing ratio of (...

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Figure 6: Voltage dependence of the line shape width B₀. The values of B₀ were obtained from fitting the data...

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Figure 7: Experimental raw data covering ultrasmall magnetic-field effects including a MR sign-reversal. For B...

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Figure 8: Ultrasmall magnetic field effects obtained for different compositions of Spiro-TTB/HAT-CN systems w...

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Figure 9: Magnetic-field effects in transistors based on different composition of Spiro-TTB and HAT-CN with a...

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Published 19 May 2017

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